HXY MOSFET AO3401
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | AO3401 |
| LCSC Part # | C46549986 |
| Packaging | SOT-89 |
| Customer # | |
| Key Attributes | 1.2W 30V 5A 1V 40mΩ@10V 1 P-Channel P-Channel SOT-89 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Output Capacitance(Coss) | 115pF | |
| Pd - Power Dissipation | 1.2W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| RDS(on) | 40mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 9.5nC | |
| Vgs | ±12V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Output Capacitance(Coss) | 115pF | |
| Pd - Power Dissipation | 1.2W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| RDS(on) | 40mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 9.5nC | |
| Vgs | ±12V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The AO3401 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage (VDS) = -30V, drain current (ID) = -5A
- On-resistance (RDS(ON)) < 45mΩ at gate-source voltage (VGS) = -10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
- P-channel MOSFET
In-Stock: 1,010
1,010 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0589 | $ 0.59 |
| 100+ | $ 0.0472 | $ 4.72 |
| 300+ | $ 0.0414 | $ 12.42 |
| 1,000+ | $ 0.037 | $ 37.00 |
| 5,000+ | $ 0.0335 | $ 167.50 |
| 10,000+ | $ 0.0317 | $ 317.00 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Output Capacitance(Coss) | 115pF | |
| Pd - Power Dissipation | 1.2W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| RDS(on) | 40mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 9.5nC | |
| Vgs | ±12V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Output Capacitance(Coss) | 115pF | |
| Pd - Power Dissipation | 1.2W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| RDS(on) | 40mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 9.5nC | |
| Vgs | ±12V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The AO3401 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage (VDS) = -30V, drain current (ID) = -5A
- On-resistance (RDS(ON)) < 45mΩ at gate-source voltage (VGS) = -10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
- P-channel MOSFET
C46549986 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



