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onsemi FDG8842CZRoHS

Manufacturer
onsemi
MPN
FDG8842CZ
LCSC Part #
C464156
Packaging
SOT-323-6L
Customer #
Key Attributes
MOSFET 25V 0.41A SOT-323-6L
Datasheetpdf icononsemi FDG8842CZ
In-Stock: 2,440
2,440 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.9475$ 1.95
10+$ 1.6373$ 16.37
30+$ 1.4424$ 43.27
100+$ 1.2442$ 124.42
500+$ 1.1533$ 576.65
1,000+$ 1.1143$ 1114.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-323-6L
Operating Temperature-55℃~+150℃
Drain to Source Voltage25V
Current - Continuous Drain(Id)410mA
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)1.1Ω@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)70pF
Gate Charge(Qg)1.68nC@4.5V
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Introduction

AI Translation

Very low level gate drive requirements allowing direct operation in zv circuits (VGS(th) < 1.5V) These N & P-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. Very small package outline SC70-6

Features

AI Translation
  • Q1: N-Channel
  • Max rDS(on) = 0.4 Ω at VGS = 4.5 V, ID = 0.75 A
  • Max rDS(on) = 0.5 Ω at VGS = 2.7 V, ID = 0.67 A
  • Q2: P-Channel
  • Max rDS(on) = 1.1 Ω at VGS = -4.5 V, ID = -0.41 A
  • Max rDS(on) = 1.5 Ω at VGS = -2.7 V, ID = -0.25 A
  • Minimal gate drive requirement, allowing direct operation in 3V circuits (VGS(th) < 1.5 V)
  • Ultra-small SC70-6 package
  • RoHS compliant