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EDA ModelsEasyEDA
onsemi FDMS7700S
| Manufacturer | |
| MPN | FDMS7700S |
| LCSC Part # | C463960 |
| Packaging | Power-56-8 |
| Customer # | |
| Key Attributes | 30V 2.4mΩ@10V 2 N-Channel Power-56-8 Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi FDMS7700S |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 30A;40A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V;3V | |
| Pd - Power Dissipation | 2.2W;2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF;185pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.315nF;7.24nF | |
| Gate Charge(Qg) | 20nC@10V;105nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 30A;40A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V;3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.2W;2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF;185pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.315nF;7.24nF | |
| Gate Charge(Qg) | 20nC@10V;105nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device integrates two dedicated N-channel MOSFETs in a dual MLP package. The switch node is internally connected, facilitating layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) are designed for optimal power efficiency.
Features
AI Translation
- Q1: N-channel
- Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A
- Q2: N-channel
- Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 18 A
- RoHS compliant
Applications
AI Translation
- Computing
- Communications
- General Point-of-Load
- Notebook VCORE
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.0951 | $ 2.10 |
| 10+ | $ 2.0507 | $ 20.51 |
| 30+ | $ 2.0201 | $ 60.60 |
| 100+ | $ 1.9895 | $ 198.95 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 30A;40A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V;3V | |
| Pd - Power Dissipation | 2.2W;2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF;185pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.315nF;7.24nF | |
| Gate Charge(Qg) | 20nC@10V;105nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power-56-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 30A;40A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V;3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.2W;2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF;185pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.315nF;7.24nF | |
| Gate Charge(Qg) | 20nC@10V;105nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device integrates two dedicated N-channel MOSFETs in a dual MLP package. The switch node is internally connected, facilitating layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) are designed for optimal power efficiency.
Features
AI Translation
- Q1: N-channel
- Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A
- Q2: N-channel
- Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 18 A
- RoHS compliant
Applications
AI Translation
- Computing
- Communications
- General Point-of-Load
- Notebook VCORE
C463960 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSBA3496 | HUASHUO | PRPAK5x6-8L | 2,886 | $ 0.6726 | ||
| HSBA3430 | HUASHUO | PRPAK5x6-8L | 264 | $ 1.1686 | ||
| HSBA3480 | HUASHUO | PRPAK-8(5x6) | 2,265 | $ 0.4145 | ||
| AOE6936 | AOS | DFN-8(5x6) | 105 | $ 1.4403 | ||
| HP8K22TB | ROHM | HSOP-8 | 3 | $ 1.5574 | ||
| AONY36354 | AOS | DFN-8(5x6) | 3 | $ 0.9228 | ||
| AON6996 | AOS | DFN-8(5x6) | 0 | $ 0.4992 | ||
| HSBA3482 | HUASHUO | PRPAK-8(5x6) | 0 | $ 0.6022 | ||
| NVMFD5C466NT1G | onsemi | DFN-8(5x6) | 0 | $ 2.8417 | ||
| NVMFD5C466NLWFT1G | onsemi | DFN-8(5x6) | 0 | $ 2.32 |