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onsemi FCB070N65S3
| Manufacturer | |
| MPN | FCB070N65S3 |
| LCSC Part # | C463703 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 650V 44A 4.5V 312W 1 N-channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi FCB070N65S3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 312W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.09nF | |
| Gate Charge(Qg) | 78nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 312W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.09nF | |
| Gate Charge(Qg) | 78nC@10V |
Introduction
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of AC/DC power conversion applications, enabling system miniaturization and improved efficiency.
Features
- 700 V @ TJ = 150°C
- RDS(on) = 62 mΩ (typical)
- Ultra-low gate charge (typical Qg = 78 nC)
- Low effective output capacitance (typical Coss(eff.) = 715 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Applications
- Telecom/Server Power Supplies - Industrial Power Supplies - UPS/Solar Power
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 6.1817 | $ 6.18 |
| 10+ | $ 6.0859 | $ 60.86 |
| 30+ | $ 6.0225 | $ 180.68 |
| 100+ | $ 5.9592 | $ 595.92 |
Standard Packaging800/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 312W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.09nF | |
| Gate Charge(Qg) | 78nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 312W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.09nF | |
| Gate Charge(Qg) | 78nC@10V |
Introduction
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of AC/DC power conversion applications, enabling system miniaturization and improved efficiency.
Features
- 700 V @ TJ = 150°C
- RDS(on) = 62 mΩ (typical)
- Ultra-low gate charge (typical Qg = 78 nC)
- Low effective output capacitance (typical Coss(eff.) = 715 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Applications
- Telecom/Server Power Supplies - Industrial Power Supplies - UPS/Solar Power
C463703 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |