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Infineon IRF3007PBFRoHS

Manufacturer
Infineon
MPN
IRF3007PBF
LCSC Part #
C459957
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 75V 75A TO-220AB
Datasheetpdf iconInfineon IRF3007PBF
In-Stock: 5
5 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.4261$ 3.43
10+$ 2.9317$ 29.32
30+$ 2.6372$ 79.12
100+$ 2.3412$ 234.12
500+$ 2.2036$ 1101.80
1,000+$ 2.1412$ 2141.20
Standard Packaging3000/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Operating Temperature-55℃~+175℃
Drain to Source Voltage75V
Current - Continuous Drain(Id)75A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)3.27nF
Gate Charge(Qg)130nC@10V
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Introduction

AI Translation

This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free

Applications

AI Translation
  • Industrial Motor Drive