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ST STW10NK80ZRoHS

Manufacturer
ST
MPN
STW10NK80Z
LCSC Part #
C457482
Packaging
TO-247-3
Customer #
Key Attributes
800V 9A 4.5V 160W 780mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconST STW10NK80Z
In-Stock: 13
13 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 5.7545$ 5.75
10+$ 5.67$ 56.70
30+$ 5.4637$ 163.91
100+$ 5.4068$ 540.68
Standard Packaging600/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-247-3
Operating Temperature-55℃~+150℃
Drain to Source Voltage800V
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.18nF
Gate Charge(Qg)72nC@640V
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Introduction

AI Translation

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeability

Applications

AI Translation
  • Switching application