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ST STP10NK80ZRoHS

Manufacturer
ST
MPN
STP10NK80Z
LCSC Part #
C457452
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 800V 9A TO-220
Datasheetpdf iconST STP10NK80Z
In-Stock: 66
66 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.0673$ 3.07
10+$ 2.7424$ 27.42
50+$ 2.5393$ 126.97
100+$ 2.3314$ 233.14
500+$ 2.2372$ 1118.60
1,000+$ 2.1965$ 2196.50
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Operating Temperature-55℃~+150℃
Drain to Source Voltage800V
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.18nF
Gate Charge(Qg)72nC@640V
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Introduction

AI Translation

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeability

Applications

AI Translation
  • Switching application