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VBsemi Elec IPD50N06S214ATMA2-VB product image
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VBsemi Elec IPD50N06S214ATMA2-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
IPD50N06S214ATMA2-VB
LCSC Part #
C45662341
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 58A TO-252
Datasheetpdf iconVBsemi Elec IPD50N06S214ATMA2-VB
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.869$ 0.7387$ 0.74
10+$ 0.7437$ 0.6322$ 6.32
30+$ 0.6818$ 0.5796$ 17.39
100+$ 0.62$ 0.5270$ 52.70
500+$ 0.4817$ 0.4095$ 204.75
1,000+$ 0.4638$ 0.3943$ 394.30
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Drain to Source Voltage60V
Operating Temperature-55℃~+175℃
Current - Continuous Drain(Id)58A
Output Capacitance(Coss)470pF
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation136W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)225pF
Number1 N-channel
Input Capacitance(Ciss)2.65nF
Gate Charge(Qg)70nC@10V
TypeN-Channel
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Features

AI Translation
  • Junction temperature 175 °C
  • TrenchFET power MOSFET
  • N-channel MOSFET