Nexperia PSMN2R0-30YL,115
| Manufacturer | |
| MPN | PSMN2R0-30YL,115 |
| LCSC Part # | C456160 |
| Packaging | SOT-669 |
| Customer # | |
| Key Attributes | 30V 100A 2.15V 97W 1 N-channel SOT-669 Single FETs, MOSFETs RoHS |
| Datasheet | |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 2.15V | |
| Pd - Power Dissipation | 97W | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.98nF | |
| Gate Charge(Qg) | 64nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.15V | |
| Pd - Power Dissipation | 97W | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.98nF | |
| Gate Charge(Qg) | 64nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Logic level N-channel enhancement mode FET in a plastic package using TrenchMOS technology. This product is designed and qualified for industrial and communications applications.
Features
AI Translation
- Low switching and conduction losses, high efficiency
- Compatible with logic-level gate drive sources
Applications
AI Translation
- Class D amplifiers
- Motor control
- DC-DC converters
- Server power supplies
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.8203 | $ 0.82 |
| 10+ | $ 0.8035 | $ 8.04 |
| 30+ | $ 0.7912 | $ 23.74 |
| 100+ | $ 0.779 | $ 77.90 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 2.15V | |
| Pd - Power Dissipation | 97W | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.98nF | |
| Gate Charge(Qg) | 64nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.15V | |
| Pd - Power Dissipation | 97W | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.98nF | |
| Gate Charge(Qg) | 64nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Logic level N-channel enhancement mode FET in a plastic package using TrenchMOS technology. This product is designed and qualified for industrial and communications applications.
Features
AI Translation
- Low switching and conduction losses, high efficiency
- Compatible with logic-level gate drive sources
Applications
AI Translation
- Class D amplifiers
- Motor control
- DC-DC converters
- Server power supplies
C456160 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PSMN2R5-30YL,115 | Nexperia | SOT-669 | 100 | $ 2.3769 | ||
| PSMN1R7-30YL,115 | Nexperia | SOT-669 | 40 | $ 3.4264 | ||
| BUK9Y4R4-40E,115 | Nexperia | SOT-669 | 40 | $ 2.4938 | ||
| BUK7Y7R8-80E | Nexperia | SOT-669 | 28 | $ 2.5995 | ||
| PSMN2R0-30YLE,115 | Nexperia | SOT-669 | 1,504 | $ 1.1128 | ||
| PSMN1R5-30YL,115 | Nexperia | SOT-669 | 0 | $ 1.8978 | ||
| PSMN2R6-30YLC,115 | Nexperia | SOT-669 | 0 | $ 0.0786 | ||
| PSMN3R0-30YL,115 | Nexperia | SOT-669 | 0 | $ 1.2526 | ||
| PSMN2R2-30YLC,115 | Nexperia | SOT-669 | 0 | $ 0.5739 | ||
| PSMN4R1-60YLX | Nexperia | SOT-669 | 0 | $ 0.6902 |



