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HUASHUO HSCB8236 product image
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HUASHUO HSCB8236

Manufacturer
HUASHUOAsian Brands
MPN
HSCB8236
LCSC Part #
C45385113
Packaging
DFN2x2-6L
Customer #
Key Attributes
MOSFET N-CH ARR 20V 6A DFN2x2-6L
Datasheetpdf iconHUASHUO HSCB8236
In-Stock: 2,750
2,750 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1979$ 0.99
50+$ 0.1569$ 7.85
150+$ 0.1393$ 20.90
500+$ 0.1174$ 58.70
3,000+$ 0.1076$ 322.80
6,000+$ 0.1018$ 610.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingDFN2x2-6L
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Current - Continuous Drain(Id)6A
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.4W
RDS(on)18mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number2 N-Channel
Input Capacitance(Ciss)640pF
Gate Charge(Qg)10nC@4.5V
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Introduction

AI Translation

HSCB8236 is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSCB8236 complies with RoHS and green product requirements, and has passed full-function reliability qualification.

Features

AI Translation
  • RoHS-compliant green device
  • Ultra-low gate charge
  • Excellent Cdv/dt immunity
  • Advanced high cell density trench technology
  • ESD protection
  • DFN2×2 - 6L pin configuration