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MACOM MSS20-047-E20
| Manufacturer | |
| MPN | MSS20-047-E20 |
| LCSC Part # | C4468381 |
| Packaging | - |
| Customer # | |
| Key Attributes | 1V 35mA Single Diodes |
| Datasheet |  MACOM MSS20-047-E20 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 1V | |
| Diode Configuration | - | |
| Voltage - Forward(Vf@If) | - | |
| Reverse Leakage Current (Ir) | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 35mA |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 1V |
| Type | Description | |
|---|---|---|
| Diode Configuration | - | |
| Voltage - Forward(Vf@If) | - | |
| Reverse Leakage Current (Ir) | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 35mA |
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Introduction
AI Translation
The MSS20-xxx-x series Schottky diodes are fabricated on a P-type epitaxial substrate, offering excellent 1/f noise performance for zero-bias detector applications up to 40 GHz. Chip and Beam Lead Electrical Specifications: Ambient Temperature TA = 25°C Packaged Electrical Specifications: Ambient Temperature TA = 25°C, Reverse Breakdown Voltage VBR minimum 0.8 V at 100 μA
Features
AI Translation
- Ultra-low 1/f noise
- Suitable for detector applications up to 40 GHz
- Beam-lead chip and packaged devices
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 21.3687 | $ 21.37 |
| 200+ | $ 8.2704 | $ 1654.08 |
| 500+ | $ 7.979 | $ 3989.50 |
| 1,000+ | $ 7.8364 | $ 7836.40 |
Standard Packaging50/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 1V | |
| Diode Configuration | - | |
| Voltage - Forward(Vf@If) | - | |
| Reverse Leakage Current (Ir) | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 35mA |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 1V |
| Type | Description | |
|---|---|---|
| Diode Configuration | - | |
| Voltage - Forward(Vf@If) | - | |
| Reverse Leakage Current (Ir) | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 35mA |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The MSS20-xxx-x series Schottky diodes are fabricated on a P-type epitaxial substrate, offering excellent 1/f noise performance for zero-bias detector applications up to 40 GHz. Chip and Beam Lead Electrical Specifications: Ambient Temperature TA = 25°C Packaged Electrical Specifications: Ambient Temperature TA = 25°C, Reverse Breakdown Voltage VBR minimum 0.8 V at 100 μA
Features
AI Translation
- Ultra-low 1/f noise
- Suitable for detector applications up to 40 GHz
- Beam-lead chip and packaged devices
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |