MACOM LM2933-Q-B-301-T

LM2933-Q-B-301 is a surface-mount silicon PIN diode, passive two-stage power limiter operating over a frequency range of 2.9 to 3.3 GHz. The device employs a mature hybrid manufacturing process, integrating PIN diodes and passive components on a ceramic substrate. This thin, compact surface-mount component delivers excellent small-signal and large-signal performance. The product is designed to achieve optimum small-signal insertion loss for ultra-low receiver noise figure, while providing outstanding flat leakage power for large input signals across the 2.9 to 3.3 GHz frequency range to effectively protect the receiver.

The extremely low thermal resistance of the PIN diodes within the device, combined with the built-in Schottky detector bias current source, enables reliable handling of RF incident power levels up to 47 dBm CW and peak RF incident power levels up to 62 dBm. The I-layer thickness of the output stage, combined with the design of the internal Schottky detector current source, produces a typical flat leakage of 23 dBm and a typical spike leakage energy of 0.25 ergs. No external control signals are required. This limiter module incorporates internal DC-blocking capacitors and an internal DC return path in the RF signal path. This PIN diode limiter is ideally suited for receiver and LNA protection applications.

• Surface-mount limiter, package dimensions 8L×5W×2.5H mm
• Integrates PIN limiting diodes, DC-blocking capacitors, Schottky diodes, and DC return path
• Higher peak power handling capability than plastic-packaged limiters
• Higher average power handling capability than plastic-packaged limiters
• Ultra-low insertion loss
• Low flat leakage power
• RoHS compliant

• Receiver and low-noise amplifier protection applications