MACOM MA4AGP907
| Manufacturer | |
| MPN | MA4AGP907 |
| LCSC Part # | C4468043 |
| Packaging | SMD |
| Customer # | |
| Key Attributes | Standalone 1.45V@10mA 50V SMD RF Diodes RoHS |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/RF Diodes | |
| Manufacturer | MACOM | |
| Packaging | SMD | |
| Diode Configuration | Standalone | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Voltage - Forward(Vf@If) | 1.45V@10mA | |
| DC Reverse Voltage(Vr) | 50V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/RF Diodes | |
| Manufacturer | MACOM | |
| Packaging | SMD | |
| Diode Configuration | Standalone |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Voltage - Forward(Vf@If) | 1.45V@10mA | |
| DC Reverse Voltage(Vr) | 50V |
Introduction
MA4AGP907 and MA4AGFCP910 are aluminum gallium arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed to achieve high device uniformity and extremely low parasitics. These diodes feature an ultralow RC product (0.1ps) and 2 - 3ns switching characteristics. They are fully passivated with silicon nitride, with an additional polymer layer for scratch protection. This protective coating prevents damage to the junction and anode air bridges during handling and assembly.
Features
- Low series resistance
- Ultra-low capacitance
- Millimeter-wave switching and cutoff frequency
- 2 ns switching speed
- Drivable by buffered TTL
- Silicon nitride passivation
- Polyimide scratch protection
- RoHS compliant
Applications
The ultra-low capacitance characteristics of the MA4AGP907 and MA4AGFCP910 enable their use in RF switch and switched phase shifter applications at millimeter-wave frequencies. These diodes are designed for pulsed or continuous wave applications where single-digit nanosecond switching speeds are required. For surface-mount assemblies, the low capacitance of these switches makes them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each "off" port can adversely load the input and degrade VSWR.
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 10.5324 | $ 10.53 |
| 10+ | $ 9.0884 | $ 90.88 |
| 30+ | $ 8.207 | $ 246.21 |
| 100+ | $ 7.4688 | $ 746.88 |
Standard Packaging100/Full Tray | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/RF Diodes | |
| Manufacturer | MACOM | |
| Packaging | SMD | |
| Diode Configuration | Standalone | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Voltage - Forward(Vf@If) | 1.45V@10mA | |
| DC Reverse Voltage(Vr) | 50V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/RF Diodes | |
| Manufacturer | MACOM | |
| Packaging | SMD | |
| Diode Configuration | Standalone |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Reverse Leakage Current (Ir) | 10uA@50V | |
| Voltage - Forward(Vf@If) | 1.45V@10mA | |
| DC Reverse Voltage(Vr) | 50V |
Introduction
MA4AGP907 and MA4AGFCP910 are aluminum gallium arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed to achieve high device uniformity and extremely low parasitics. These diodes feature an ultralow RC product (0.1ps) and 2 - 3ns switching characteristics. They are fully passivated with silicon nitride, with an additional polymer layer for scratch protection. This protective coating prevents damage to the junction and anode air bridges during handling and assembly.
Features
- Low series resistance
- Ultra-low capacitance
- Millimeter-wave switching and cutoff frequency
- 2 ns switching speed
- Drivable by buffered TTL
- Silicon nitride passivation
- Polyimide scratch protection
- RoHS compliant
Applications
The ultra-low capacitance characteristics of the MA4AGP907 and MA4AGFCP910 enable their use in RF switch and switched phase shifter applications at millimeter-wave frequencies. These diodes are designed for pulsed or continuous wave applications where single-digit nanosecond switching speeds are required. For surface-mount assemblies, the low capacitance of these switches makes them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each "off" port can adversely load the input and degrade VSWR.
C4468043 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

