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onsemi HGTG5N120BND
| Manufacturer | |
| MPN | HGTG5N120BND |
| LCSC Part # | C442448 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | IGBT 1.2kV 21A TO-247 |
| Datasheet |  onsemi HGTG5N120BND |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Td(off) | 160ns | |
| Pd - Power Dissipation | 167W | |
| Td(on) | 22ns | |
| Current - Collector(Ic) | 21A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@45uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.7V@5A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 65ns | |
| Switching Energy(Eoff) | 390uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 53nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Td(off) | 160ns | |
| Pd - Power Dissipation | 167W | |
| Td(on) | 22ns | |
| Current - Collector(Ic) | 21A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | NPT (Non-Punch Through) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@45uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.7V@5A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 65ns | |
| Switching Energy(Eoff) | 390uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 53nC |
Introduction
TheHGTG5N120BNDandHGTP5N120BNDareNonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on - state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Applications
- AC and DC motor controls
- power supplies
- drivers for solenoids, relays and contactors
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.8721 | $ 7.87 |
| 10+ | $ 7.0313 | $ 70.31 |
| 30+ | $ 5.6072 | $ 168.22 |
| 90+ | $ 5.1779 | $ 466.01 |
Standard Packaging30/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Td(off) | 160ns | |
| Pd - Power Dissipation | 167W | |
| Td(on) | 22ns | |
| Current - Collector(Ic) | 21A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@45uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.7V@5A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 65ns | |
| Switching Energy(Eoff) | 390uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 53nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Td(off) | 160ns | |
| Pd - Power Dissipation | 167W | |
| Td(on) | 22ns | |
| Current - Collector(Ic) | 21A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | NPT (Non-Punch Through) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@45uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.7V@5A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 65ns | |
| Switching Energy(Eoff) | 390uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 53nC |
Introduction
TheHGTG5N120BNDandHGTP5N120BNDareNonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on - state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Applications
- AC and DC motor controls
- power supplies
- drivers for solenoids, relays and contactors
C442448 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |