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HGSEMI HGV8552DQ/TR product image
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HGSEMI HGV8552DQ/TR

Manufacturer
HGSEMIAsian Brands
MPN
HGV8552DQ/TR
LCSC Part #
C42456071
Packaging
DFN-8-EP(3x3)
Customer #
Key Attributes
1.8MHz Zero-Drift CMOS Rail IO Opamp
DatasheetHGSEMI HGV8552DQ/TR
In-Stock: 3,664
3,664 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.3692$ 0.37
10+$ 0.3188$ 3.19
30+$ 0.2977$ 8.93
100+$ 0.2717$ 27.17
500+$ 0.2603$ 130.15
1,000+$ 0.2521$ 252.10
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ManufacturerHGSEMI
PackagingDFN-8-EP(3x3)
Output Current65mA
Number of Channels2
Vos - Input Offset Voltage1uV
Slew Rate0.95V/us
Input Offset Current(Ios)10pA
Operating Temperature-40℃~+85℃
Ib - Input Bias Current20pA
Common Mode Rejection Ratio(CMRR)110dB
Input Offset Voltage Drift(Vos TC)10nV/℃
Gain Bandwidth Product1.8MHz
Quiescent Current180uA
FeaturesZero drift / auto-zero;EMI filtering/RF suppression
Input Voltage Noise Density38nV/√Hz@1kHz
Dual Supply-2.75V~-900mV;900mV~2.75V
Rail to RailRail-to-Rail Input, Rail-to-Rail Output
Single Supply1.8V~5.5V
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