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ElecSuper AO3406A(ES) product image
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ElecSuper AO3406A(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
AO3406A(ES)
LCSC Part #
C42434121
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 4.3A SOT-23
Datasheetpdf iconElecSuper AO3406A(ES)
In-Stock: 1,940
1,940 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit PriceTotal Amount
10+$ 0.0424$ 0.42
100+$ 0.0331$ 3.31
300+$ 0.0284$ 8.52
3,000+$ 0.0249$ 74.70
6,000+$ 0.0221$ 132.60
9,000+$ 0.0207$ 186.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)4.3A
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)70mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)170pF
Gate Charge(Qg)4.1nC@10V
TypeN-Channel
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Introduction

AI Translation

The AO3406A(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product AO3406A(ES) is Pb -free.

Features

AI Translation
  • 30V, RDS(ON)=34mΩ(Typ.) @VGS=10V
  • Material: Halogen free
  • RDS(ON)=50mΩ(Typ.) @VGS=4.5V
  • Reliable and rugged
  • Use trench MOSFET technology
  • Avalanche Rated
  • High density cell design for low RDS(on)
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Power management in portable/desktop PCs
  • DC/DC conversion