ElecSuper AO3406(ES)
| Manufacturer | ElecSuperAsian Brands |
| MPN | AO3406(ES) |
| LCSC Part # | C42434120 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 4.3A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 170pF | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 170pF | |
| Type | N-Channel |
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Introduction
AI Translation
The AO3406(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product AO3406(ES) is Pb-free.
Features
AI Translation
- 30V, RDS(ON)=34mΩ(Typ.) @VGS=10V
- Material: Halogen free
- RDS(ON)=50mΩ(Typ.) @VGS=4.5V
- Reliable and rugged
- Use trench MOSFET technology
- Avalanche Rated
- High density cell design for low RDS(on)
- Low leakage current
Applications
AI Translation
- PWM applications
- Power management in portable/desktop PCs
- DC/DC conversion
In-Stock: 2,080
2,080 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0457 | $ 0.91 |
| 200+ | $ 0.0379 | $ 7.58 |
| 600+ | $ 0.034 | $ 20.40 |
| 3,000+ | $ 0.0311 | $ 93.30 |
| 9,000+ | $ 0.0287 | $ 258.30 |
| 21,000+ | $ 0.0275 | $ 577.50 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 170pF | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 4.3A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 170pF | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The AO3406(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product AO3406(ES) is Pb-free.
Features
AI Translation
- 30V, RDS(ON)=34mΩ(Typ.) @VGS=10V
- Material: Halogen free
- RDS(ON)=50mΩ(Typ.) @VGS=4.5V
- Reliable and rugged
- Use trench MOSFET technology
- Avalanche Rated
- High density cell design for low RDS(on)
- Low leakage current
Applications
AI Translation
- PWM applications
- Power management in portable/desktop PCs
- DC/DC conversion
C42434120 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



