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VBsemi Elec IPG20N06S2L-50-VB product image
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VBsemi Elec IPG20N06S2L-50-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
IPG20N06S2L-50-VB
LCSC Part #
C42428230
Packaging
DFN5x6-8
Customer #
Key Attributes
MOSFET N-CH 60V 17A DFN5x6-8
Datasheetpdf iconVBsemi Elec IPG20N06S2L-50-VB
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.4417$ 1.2255$ 1.23
10+$ 1.2351$ 1.0499$ 10.50
30+$ 1.1309$ 0.9613$ 28.84
100+$ 1.0284$ 0.8742$ 87.42
500+$ 0.8006$ 0.6806$ 340.30
1,000+$ 0.7681$ 0.6529$ 652.90
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingDFN5x6-8
Drain to Source Voltage60V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)17A
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation14W
RDS(on)38mΩ@4.5V
Number2 N-Channel
Gate Charge(Qg)23nC@10V
TypeN-Channel
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Introduction

AI Translation

030N12 utilizes advanced SGT technology to deliver excellent RDS(ON). The device is well-suited for high-frequency switching and synchronous rectification. 120V, 2.8mΩ typical, 180A N-channel MOSFET

Features

AI Translation
  • Trench power MOS FET
  • PWM optimized
  • 100 % Rg and UIS tested

Applications

AI Translation
  • System power DC/DC