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ElecSuper ES2N7002DW1T1G product image
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ElecSuper ES2N7002DW1T1GRoHS

Manufacturer
ElecSuperAsian Brands
MPN
ES2N7002DW1T1G
LCSC Part #
C42420751
Packaging
SOT-363
Customer #
Key Attributes
MOSFET 60V 300mA SOT-363
Datasheetpdf iconElecSuper ES2N7002DW1T1G
In-Stock: 4,440
4,440 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
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QtyUnit PriceTotal Amount
20+$ 0.0331$ 0.66
200+$ 0.0268$ 5.36
600+$ 0.0233$ 13.98
3,000+$ 0.0211$ 63.30
9,000+$ 0.0193$ 173.70
21,000+$ 0.0183$ 384.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-363
Drain to Source Voltage60V
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
RDS(on)1.85Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number2 N-Channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
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Introduction

AI Translation

The ES2N7002DW1T1G is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ES2N7002DW1T1G is Pb-free.

Features

AI Translation
  • 60V, RDS(ON)=1.85Ω(TYP.) VGS=10V
  • RDS(ON)=2.05Ω(TYP.) VGS=4.5V
  • Use trench MOSFET technology
  • High density cell design for low RDS(on)
  • ESD Protection - HBM: 2kV
  • Material: Halogen free
  • Reliable and rugged
  • Avalanche Rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switch
  • Power management in portable/desktop PCs
  • DC/DC conversion