LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Minos IRFB7545-MNS product image
  • IRFB7545-MNS thumbnail 1
  • IRFB7545-MNS thumbnail 2
  • IRFB7545-MNS thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Minos IRFB7545-MNSRoHS

Manufacturer
MinosAsian Brands
MPN
IRFB7545-MNS
LCSC Part #
C42411363
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 60V 120A TO-220
Datasheetpdf iconMinos IRFB7545-MNS
In-Stock: 300
300 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.379$ 1.90
50+$ 0.296$ 14.80
150+$ 0.2619$ 39.29
500+$ 0.218$ 109.00
2,500+$ 0.1985$ 496.25
5,000+$ 0.1871$ 935.50
Standard Packaging50/Full Tube
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-220
Drain to Source Voltage60V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)345pF
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation143W
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)270pF
Number1 N-channel
Input Capacitance(Ciss)3.7nF
Gate Charge(Qg)80nC@10V
Report an ErrorShow similar products (0) >

Introduction

AI Translation

IRFB7545-MNS utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 60 V, ID = 120 A
  • RDS(ON) < 7 mΩ @ VGS = 10 V
  • Special process technology with high ESD capability
  • High-density cell design for reduced RDS(ON)
  • Fully characterized avalanche voltage and current
  • High EAS with excellent stability and consistency
  • Superior package with good thermal dissipation performance

Applications

AI Translation
  • Power switch applications
  • Hard switching and high-frequency circuits
  • Uninterruptible power supplies