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ST STD10NM60NRoHS

Manufacturer
ST
MPN
STD10NM60N
LCSC Part #
C42088
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 600V 10A TO-252(DPAK)
Datasheetpdf iconST STD10NM60N
In-Stock: 3,129
3,129 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0245$ 1.02
10+$ 0.8212$ 8.21
30+$ 0.7188$ 21.56
100+$ 0.618$ 61.80
500+$ 0.5578$ 278.90
1,000+$ 0.5269$ 526.90
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252(DPAK)
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)44pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)540pF
Gate Charge(Qg)19nC@10V
TypeN-Channel
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Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the strip layout to yield low on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

AI Translation
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

AI Translation
  • Switching applications