R+O MMST5551
| Manufacturer | R+OAsian Brands |
| MPN | MMST5551 |
| LCSC Part # | C41410769 |
| Packaging | SOT-323 |
| Customer # | |
| Key Attributes | TRANS NPN 160V 0.6A SOT-323 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-323 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 300 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 150mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-323 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 160V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 300 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 150mV |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Switching and amplification in high voltage
- Power dissipation of 200 mW
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
Applications
AI Translation
- telephony
In-Stock: 36,100
36,100 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0239 | $ 0.48 |
| 200+ | $ 0.0193 | $ 3.86 |
| 600+ | $ 0.0167 | $ 10.02 |
| 3,000+ | $ 0.0147 | $ 44.10 |
| 9,000+ | $ 0.0134 | $ 120.60 |
| 21,000+ | $ 0.0127 | $ 266.70 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-323 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 300 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 150mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-323 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 160V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 300 | |
| Pd - Power Dissipation | 200mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 150mV |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Switching and amplification in high voltage
- Power dissipation of 200 mW
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
Applications
AI Translation
- telephony
C41410769 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



