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ElecSuper AO3400-ES product image
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ElecSuper AO3400-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
AO3400-ES
LCSC Part #
C41365197
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 4.3A SOT-23
Datasheetpdf iconElecSuper AO3400-ES
In-Stock: 2,950
2,950 In stock, ships now
Minimum: 50Multiple: 50Sales Unit: Piece
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QtyUnit PriceTotal Amount
50+$ 0.0215$ 1.08
500+$ 0.0164$ 8.20
3,000+$ 0.0135$ 40.50
6,000+$ 0.0118$ 70.80
24,000+$ 0.0103$ 247.20
51,000+$ 0.0095$ 484.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)4.3A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.4W
RDS(on)34mΩ@10V;50mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)170pF
Gate Charge(Qg)4.1nC@10V
TypeN-Channel
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Introduction

AI Translation

AO3400-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product AO3400-ES is lead-free.

Features

AI Translation
  • 30 V, RDS(ON) = 34 mΩ (typical), VGS = 10 V
  • RDS(ON) = 50 mΩ (typical), VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion