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ElecSuper FDN5618P-ES product image
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ElecSuper FDN5618P-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
FDN5618P-ES
LCSC Part #
C39832214
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 60V 2A SOT-23
Datasheetpdf iconElecSuper FDN5618P-ES
In-Stock: 2,900
2,900 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
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QtyUnit PriceTotal Amount
20+$ 0.0513$ 1.03
200+$ 0.0397$ 7.94
600+$ 0.0339$ 20.34
3,000+$ 0.0295$ 88.50
9,000+$ 0.026$ 234.00
21,000+$ 0.0243$ 510.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)2A
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)170mΩ@10V;190mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)496pF
Gate Charge(Qg)15.8nC@10V
TypeP-Channel
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Introduction

AI Translation

FDN5618P-ES is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product FDN5618P-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON)=155mΩ (typical) @VGS=-10V
  • RDS(ON)=195mΩ (typical) @VGS=-4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion