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DIODES DMN3029LFG-13RoHS

Manufacturer
DIODES
MPN
DMN3029LFG-13
LCSC Part #
C397944
Packaging
PowerDI3333-8
Customer #
Key Attributes
MOSFET N-CH 30V 8A PowerDI3333-8
Datasheetpdf iconDIODES DMN3029LFG-13
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Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.2807$ 1.40
50+$ 0.2768$ 13.84
150+$ 0.2741$ 41.12
500+$ 0.2715$ 135.75
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingPowerDI3333-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Current - Continuous Drain(Id)8A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation2.07W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)26.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)580pF
Gate Charge(Qg)11.3nC@10V
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Introduction

AI Translation

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

AI Translation
  • Low RDS(ON) – ensures on state losses are minimized
  • Small form factor thermally efficient package enables higher density end products
  • Occupies just 33% of the board area occupied by SO - 8 enabling smaller end product
  • 100% UIS (Avalanche) rated
  • 100% Rg tested
  • Lead - Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC - Q101 Standards for High Reliability

Applications

AI Translation
  • Backlighting
  • DC - DC Converters
  • Power management functions