Hangzhou Silan Microelectronics SVF3878PN
| Fabricante | Hangzhou Silan MicroelectronicsAsian Brands |
| Cód. da peça | SVF3878PN |
| Nº LCSC | C393727 |
| Emb. | TO-3P-3 |
| Número do Cliente | |
| Atrib. princ. | MOSFET N-CH 900V 9A TO-3P-3 |
| Folha de Dados |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Hangzhou Silan Microelectronics | |
| Emb. | TO-3P-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 208pF | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.009nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Hangzhou Silan Microelectronics | |
| Emb. | TO-3P-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 208pF | |
| Current - Continuous Drain(Id) | 9A |
| Tipo | Descrição | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.009nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
Descrição
SVF3878PN is an N-channel enhancement-mode power MOSFET fabricated using Silan's proprietary F-Cell™ VDMOS technology. The improved planar stripe cell and enhanced guard ring termination are specifically optimized for reduced on-resistance, superior switching performance, and the capability to withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Recursos
- 9A, 900V, R DS(on) = 1.0Ω at VGS = 10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
Aplicações
-AC-DC Power Supply -DC-DC Converter -H-Bridge PWM Motor Driver
| Qtd. | Preço unit. | Valor total |
|---|---|---|
| 1+ | $ 1.3026 | $ 1.30 |
| 10+ | $ 1.1179 | $ 11.18 |
| 30+ | $ 0.992 | $ 29.76 |
| 90+ | $ 0.876 | $ 78.84 |
| 510+ | $ 0.8253 | $ 420.90 |
| 1,200+ | $ 0.8025 | $ 963.00 |
Encapsulamento Padrão30/Full Tube | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Hangzhou Silan Microelectronics | |
| Emb. | TO-3P-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 208pF | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.009nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Hangzhou Silan Microelectronics | |
| Emb. | TO-3P-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 208pF | |
| Current - Continuous Drain(Id) | 9A |
| Tipo | Descrição | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.009nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
Descrição
SVF3878PN is an N-channel enhancement-mode power MOSFET fabricated using Silan's proprietary F-Cell™ VDMOS technology. The improved planar stripe cell and enhanced guard ring termination are specifically optimized for reduced on-resistance, superior switching performance, and the capability to withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Recursos
- 9A, 900V, R DS(on) = 1.0Ω at VGS = 10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
Aplicações
-AC-DC Power Supply -DC-DC Converter -H-Bridge PWM Motor Driver
C393727 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



