ST STGP7NC60HD
| Manufacturer | |
| MPN | STGP7NC60HD |
| LCSC Part # | C38025 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | IGBT 600V 25A TO-220 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Td(off) | 72ns | |
| Pd - Power Dissipation | 80W | |
| Td(on) | 18.5ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 17pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@0.25mA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V@7A,15V | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 115uJ | |
| Turn-On Energy (Eon) | 95uJ | |
| Input Capacitance(Cies) | 720pF | |
| Output Capacitance(Coes) | 81pF | |
| Gate Charge(Qg) | 35nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Td(off) | 72ns | |
| Pd - Power Dissipation | 80W | |
| Td(on) | 18.5ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 17pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@0.25mA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V@7A,15V | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 115uJ | |
| Turn-On Energy (Eon) | 95uJ | |
| Input Capacitance(Cies) | 720pF | |
| Output Capacitance(Coes) | 81pF | |
| Gate Charge(Qg) | 35nC |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
Features
AI Translation
- Low on-voltage drop (VCE(sat))
- Off losses include tail current
- Losses include diode recovery energy
- High frequency operation up to 70 kHz
- Very soft ultra fast recovery anti parallel diode
Applications
AI Translation
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drivers
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6402 | $ 1.64 |
| 10+ | $ 1.3714 | $ 13.71 |
| 30+ | $ 1.2233 | $ 36.70 |
| 100+ | $ 1.0559 | $ 105.59 |
| 500+ | $ 0.9819 | $ 490.95 |
| 1,000+ | $ 0.9481 | $ 948.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Td(off) | 72ns | |
| Pd - Power Dissipation | 80W | |
| Td(on) | 18.5ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 17pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@0.25mA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V@7A,15V | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 115uJ | |
| Turn-On Energy (Eon) | 95uJ | |
| Input Capacitance(Cies) | 720pF | |
| Output Capacitance(Coes) | 81pF | |
| Gate Charge(Qg) | 35nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Td(off) | 72ns | |
| Pd - Power Dissipation | 80W | |
| Td(on) | 18.5ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 17pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@0.25mA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V@7A,15V | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 115uJ | |
| Turn-On Energy (Eon) | 95uJ | |
| Input Capacitance(Cies) | 720pF | |
| Output Capacitance(Coes) | 81pF | |
| Gate Charge(Qg) | 35nC |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
Features
AI Translation
- Low on-voltage drop (VCE(sat))
- Off losses include tail current
- Losses include diode recovery energy
- High frequency operation up to 70 kHz
- Very soft ultra fast recovery anti parallel diode
Applications
AI Translation
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drivers
C38025 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



