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ST STP10NK80ZFPRoHS

Manufacturer
ST
MPN
STP10NK80ZFP
LCSC Part #
C377948
Packaging
TO-220FP
Customer #
Key Attributes
MOSFET N-CH 800V 9A TO-220FP
Datasheetpdf iconST STP10NK80ZFP
In-Stock: 1,000
1,000 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.9364$ 1.94
10+$ 1.663$ 16.63
30+$ 1.4922$ 44.77
100+$ 1.3181$ 131.81
500+$ 1.2383$ 619.15
1,000+$ 1.2042$ 1204.20
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220FP
Operating Temperature-55℃~+150℃
Drain to Source Voltage800V
Output Capacitance(Coss)205pF
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.18nF
Gate Charge(Qg)72nC@10V
TypeN-Channel
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Introduction

AI Translation

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeability

Applications

AI Translation
  • Switching application