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MASPOWER ESJ100SH60N
| Manufacturer | MASPOWERAsian Brands |
| MPN | ESJ100SH60N |
| LCSC Part # | C37635852 |
| Packaging | FD7 |
| Customer # | |
| Key Attributes | High Power NPT & Rugged Type IGBT Module |
| Datasheet |  MASPOWER ESJ100SH60N |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | MASPOWER | |
| Packaging | FD7 | |
| Pd - Power Dissipation | - | |
| Td(off) | 250ns | |
| Td(on) | 120ns | |
| Current - Collector(Ic) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | 2.35V@100A,15V | |
| Collector Cut-Off Current (Ices) | 100uA | |
| Reverse Recovery Time(trr) | 180ns | |
| Switching Energy(Eoff) | 1.9mJ | |
| Turn-On Energy (Eon) | 1mJ | |
| Input Capacitance(Cies) | 5.85nF | |
| Output Capacitance(Coes) | 780pF | |
| Gate Charge(Qg) | 560nC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | MASPOWER | |
| Packaging | FD7 | |
| Pd - Power Dissipation | - | |
| Td(off) | 250ns | |
| Td(on) | 120ns | |
| Current - Collector(Ic) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| IGBT Type | NPT (Non-Punch Through) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | 2.35V@100A,15V | |
| Collector Cut-Off Current (Ices) | 100uA | |
| Reverse Recovery Time(trr) | 180ns | |
| Switching Energy(Eoff) | 1.9mJ | |
| Turn-On Energy (Eon) | 1mJ | |
| Input Capacitance(Cies) | 5.85nF | |
| Output Capacitance(Coes) | 780pF | |
| Gate Charge(Qg) | 560nC@15V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- High Speed Switching
- BV_CES = 600V
- Low Conduction Loss: V_CE(sat) = 1.95V (typ.)
- Fast & Soft Anti-Parallel FWD
- Short circuit rated: Min. 10uS at T_C = 100°C
- Reduced EMI and RFI
- Isolation Type Package
Applications
AI Translation
- Welding Machine
- UPS
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 34.4854 | $ 34.49 |
Standard Packaging10/Full Box | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | MASPOWER | |
| Packaging | FD7 | |
| Pd - Power Dissipation | - | |
| Td(off) | 250ns | |
| Td(on) | 120ns | |
| Current - Collector(Ic) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | 2.35V@100A,15V | |
| Collector Cut-Off Current (Ices) | 100uA | |
| Reverse Recovery Time(trr) | 180ns | |
| Switching Energy(Eoff) | 1.9mJ | |
| Turn-On Energy (Eon) | 1mJ | |
| Input Capacitance(Cies) | 5.85nF | |
| Output Capacitance(Coes) | 780pF | |
| Gate Charge(Qg) | 560nC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | MASPOWER | |
| Packaging | FD7 | |
| Pd - Power Dissipation | - | |
| Td(off) | 250ns | |
| Td(on) | 120ns | |
| Current - Collector(Ic) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| IGBT Type | NPT (Non-Punch Through) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA | |
| Operating Temperature | -40℃~+125℃ | |
| Vce Saturation(VCE(sat)) | 2.35V@100A,15V | |
| Collector Cut-Off Current (Ices) | 100uA | |
| Reverse Recovery Time(trr) | 180ns | |
| Switching Energy(Eoff) | 1.9mJ | |
| Turn-On Energy (Eon) | 1mJ | |
| Input Capacitance(Cies) | 5.85nF | |
| Output Capacitance(Coes) | 780pF | |
| Gate Charge(Qg) | 560nC@15V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- High Speed Switching
- BV_CES = 600V
- Low Conduction Loss: V_CE(sat) = 1.95V (typ.)
- Fast & Soft Anti-Parallel FWD
- Short circuit rated: Min. 10uS at T_C = 100°C
- Reduced EMI and RFI
- Isolation Type Package
Applications
AI Translation
- Welding Machine
- UPS
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |