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micron MT41K128M16JT-125:k
| Manufacturer | |
| MPN | MT41K128M16JT-125:k |
| LCSC Part # | C36513 |
| Packaging | FBGA-96(8x14) |
| Customer # | |
| Key Attributes | 2Gb:x4,x8,x16 DDR3L SDRAM |
| Datasheet |  micron MT41K128M16JT-125:k |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | FBGA-96(8x14) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Write leveling function;Data mask function;Dynamic on-chip termination;Asynchronous reset function | |
| Refresh Current | 12mA | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 1.283V~1.45V | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3L SDRAM | |
| Current - Supply | 46mA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | FBGA-96(8x14) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Write leveling function;Data mask function;Dynamic on-chip termination;Asynchronous reset function | |
| Refresh Current | 12mA |
| Type | Description | |
|---|---|---|
| Memory Size | 2Gbit | |
| Voltage - Supply | 1.283V~1.45V | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3L SDRAM | |
| Current - Supply | 46mA |
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Introduction
AI Translation
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Unless stated otherwise, the DDR3L SDRAM device meets the functional and timing specifications listed in the equivalent density standard or automotive DDR3 SDRAM data sheet located on www.micron.com.
Features
AI Translation
- VDD = VDDQ = 1.35V (1.283–1.45V)
- Backward-compatible to VDD = VDDQ = 1.5V±0.075V
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Programmable posted CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode
- TC of 0℃ to +95℃ – 64ms, 8192-cycle refresh at 0℃ to +85℃ 32ms at +85℃ to +95℃
- Self refresh temperature (SRT)
- Automatic self refresh (ASR)
- Write leveling
- Multipurpose register
- Output driver calibration
In-Stock: 1,488
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 17.2226 | $ 17.22 |
| 10+ | $ 16.4809 | $ 164.81 |
| 30+ | $ 15.1985 | $ 455.96 |
| 100+ | $ 12.1947 | $ 1219.47 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | FBGA-96(8x14) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Write leveling function;Data mask function;Dynamic on-chip termination;Asynchronous reset function | |
| Refresh Current | 12mA | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 1.283V~1.45V | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3L SDRAM | |
| Current - Supply | 46mA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | FBGA-96(8x14) | |
| Operating Temperature | 0℃~+95℃ | |
| Features | Auto self-refresh;Write leveling function;Data mask function;Dynamic on-chip termination;Asynchronous reset function | |
| Refresh Current | 12mA |
| Type | Description | |
|---|---|---|
| Memory Size | 2Gbit | |
| Voltage - Supply | 1.283V~1.45V | |
| Clock Frequency | 800MHz | |
| Memory Format | DDR3L SDRAM | |
| Current - Supply | 46mA |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Unless stated otherwise, the DDR3L SDRAM device meets the functional and timing specifications listed in the equivalent density standard or automotive DDR3 SDRAM data sheet located on www.micron.com.
Features
AI Translation
- VDD = VDDQ = 1.35V (1.283–1.45V)
- Backward-compatible to VDD = VDDQ = 1.5V±0.075V
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Programmable posted CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode
- TC of 0℃ to +95℃ – 64ms, 8192-cycle refresh at 0℃ to +85℃ 32ms at +85℃ to +95℃
- Self refresh temperature (SRT)
- Automatic self refresh (ASR)
- Write leveling
- Multipurpose register
- Output driver calibration
C36513 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |