PUOLOP AO3404
| Manufacturer | PUOLOPAsian Brands |
| MPN | AO3404 |
| LCSC Part # | C351407 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 5.8A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PUOLOP | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 52mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PUOLOP | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 52mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC | |
| Type | N-Channel |
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Features
AI Translation
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
In-Stock: 20
20 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0473 | $ 0.95 |
| 200+ | $ 0.0395 | $ 7.90 |
| 600+ | $ 0.0356 | $ 21.36 |
| 3,000+ | $ 0.0311 | $ 93.30 |
| 9,000+ | $ 0.0287 | $ 258.30 |
| 21,000+ | $ 0.0275 | $ 577.50 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PUOLOP | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 52mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PUOLOP | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 52mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
C351407 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



