LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
GOFORD G15N10C product image
  • G15N10C thumbnail 1
  • G15N10C thumbnail 2
  • G15N10C thumbnail 3
  • Pinout
  • Footprint
Images for reference only

GOFORD G15N10CRoHS

Manufacturer
GOFORDAsian Brands
MPN
G15N10C
LCSC Part #
C337513
Packaging
TO-252-2
Customer #
Key Attributes
N-Channel, Current:15A, Voltage:100V
Datasheetpdf iconGOFORD G15N10C
Alternative Parts8
In-Stock: 25
25 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
Notify Me
Minimum: 5Multiple: 5Sales Unit: Piece
QtyUnit PriceTotal Amount
5+$ 0.2058$ 1.03
50+$ 0.1648$ 8.24
150+$ 0.1472$ 22.08
500+$ 0.1253$ 62.65
2,500+$ 0.1101$ 275.25
5,000+$ 0.1042$ 521.00
Standard Packaging2500/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerGOFORD
PackagingTO-252-2
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)22A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)78mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.167nF
Gate Charge(Qg)22nC
Vgs±20V
TypeN-Channel

Introduction

AI Translation

G15N10C combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low R<sub>DS(ON)</sub>. This device is ideal for power switching applications and LED backlighting.

Features

AI Translation
  • Ultra-low on-resistance
  • High single-pulse avalanche ruggedness (UIS), 100% UIS tested

Applications

AI Translation
  • Power switching applications
  • LED backlighting

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
18N10-BQGOFORDTO-25275$ 0.1776
18N10GOFORDTO-25216$ 0.3999
G450N10D5GOFORDTO-252100$ 0.2478
GT130N10KGOFORDTO-25287$ 0.3922
G200N10KGOFORDTO-25294$ 0.3922
GT105N10KGOFORDTO-25291$ 0.5166
GT100N12KGOFORDTO-252200$ 0.6758
GT650N15KGOFORDTO-252120$ 0.3168