pSemi PE42521C-Z
| Manufacturer | |
| MPN | PE42521C-Z |
| LCSC Part # | C3304153 |
| Packaging | QFN-16(3x3) |
| Customer # | |
| Key Attributes | 9kHzto13GHzBroadbandSPDTRFSwitch |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16(3x3) | |
| Frequency range | 9kHz~13GHz | |
| Features | - | |
| Voltage - Supply | 2.3V~5.5V | |
| operating temperature | -40℃~+85℃ |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16(3x3) | |
| Frequency range | 9kHz~13GHz |
| Type | Description | |
|---|---|---|
| Features | - | |
| Voltage - Supply | 2.3V~5.5V | |
| operating temperature | -40℃~+85℃ |
Introduction
The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9 kHz through 13 GHz. This switch is a pin-compatible upgraded version of PE42552 with fast switching time and higher power handling of 36 dBm continuous wave (CW) and 38.5 dBm instantaneous power in 50Ω @ 4 GHz. The PE42521 exhibits high isolation, fast settling time, and is offered in a 3x3 mm QFN package. The PE42521 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
Features
- HaRP technology enhanced
- Fast settling time of 2 μs
- No gate and phase lag
- No drift in insertion loss and phase
- Fast switching time of 500 ns
- High power handling @ 4 GHz in 50Ω
- 36 dBm CW
- 38.5 dBm instantaneous power
- 26 dBm terminated port
- High linearity
- 65 dBm IIP3
- Low insertion loss
- 0.75 dB @ 3 GHz
- 1.15 dB @ 10 GHz
- 1.85 dB @ 13 GHz
- High isolation
- 44 dB @ 3 GHz
- 30 dB @ 10 GHz
- 17 dB @ 13 GHz
- ESD performance
- 3kV HBM on RF pins to GND
- 1.5 kV HBM on all pins
- 1kV CDM on all pins
Applications
- Test/ATE
- High performance wireless applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 6.7715 | $ 6.77 |
| 10+ | $ 5.8351 | $ 58.35 |
| 30+ | $ 5.2651 | $ 157.95 |
| 100+ | $ 4.7872 | $ 478.72 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16(3x3) | |
| Frequency range | 9kHz~13GHz | |
| Features | - | |
| Voltage - Supply | 2.3V~5.5V | |
| operating temperature | -40℃~+85℃ |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16(3x3) | |
| Frequency range | 9kHz~13GHz |
| Type | Description | |
|---|---|---|
| Features | - | |
| Voltage - Supply | 2.3V~5.5V | |
| operating temperature | -40℃~+85℃ |
Introduction
The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9 kHz through 13 GHz. This switch is a pin-compatible upgraded version of PE42552 with fast switching time and higher power handling of 36 dBm continuous wave (CW) and 38.5 dBm instantaneous power in 50Ω @ 4 GHz. The PE42521 exhibits high isolation, fast settling time, and is offered in a 3x3 mm QFN package. The PE42521 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
Features
- HaRP technology enhanced
- Fast settling time of 2 μs
- No gate and phase lag
- No drift in insertion loss and phase
- Fast switching time of 500 ns
- High power handling @ 4 GHz in 50Ω
- 36 dBm CW
- 38.5 dBm instantaneous power
- 26 dBm terminated port
- High linearity
- 65 dBm IIP3
- Low insertion loss
- 0.75 dB @ 3 GHz
- 1.15 dB @ 10 GHz
- 1.85 dB @ 13 GHz
- High isolation
- 44 dB @ 3 GHz
- 30 dB @ 10 GHz
- 17 dB @ 13 GHz
- ESD performance
- 3kV HBM on RF pins to GND
- 1.5 kV HBM on all pins
- 1kV CDM on all pins
Applications
- Test/ATE
- High performance wireless applications
C3304153 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |

