MACOM MA4AGSW1A

The MA4AGSW1A is an Aluminum-GalliumArsenide, single pole, single throw (SPST), absorptive PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required.

• Ultra Broad Bandwidth: 50 MHz to 50 GHz
• Functional Bandwidth: 50 MHz to 70 GHz
• 0.5 dB Insertion Loss at 50 GHz
• 46 dB Isolation at 50 GHz
• Low Current consumption: -5 V low loss state +10 mA Isolation state
• Silicon Nitride Passivation
• Polymer Scratch protection
• RoHS Compliant

• instrumentation and radar applications
• switching arrays for radar systems, radiometers, and other multi-function components
• low loss and high isolation microwave and millimeter wave switch designs through 70 GHz