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AOS AOT42S60L
| Manufacturer | |
| MPN | AOT42S60L |
| LCSC Part # | C3290217 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 600V 37A 3.8V 417W 99mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Datasheet |  AOS AOT42S60L |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 37A | |
| Gate Threshold Voltage (Vgs(th)) | 3.8V | |
| Pd - Power Dissipation | 417W | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.154nF | |
| Gate Charge(Qg) | 40nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 37A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.8V | |
| Pd - Power Dissipation | 417W | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.154nF | |
| Gate Charge(Qg) | 40nC@10V |
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Introduction
AI Translation
AOT42S60L and AOB42S60L are manufactured using the advanced αMOS high-voltage process, designed to deliver high performance and high reliability for switching applications. These devices feature low on-resistance (RDS(on)), low gate charge (Qg), and low output capacitance stored energy (EOSS), with guaranteed avalanche capability, enabling rapid adoption in both new and existing off-line power supply designs.
Features
AI Translation
- Extremely low losses due to ultra-low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Qualified for industrial applications per JEDEC (J-STD20 and JESD22)
Applications
AI Translation
- Power Factor Correction (PFC) stages, hard-switched PWM stages, and resonant-switched PWM stages, such as those used in PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS.
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.8016 | $ 3.80 |
| 200+ | $ 1.4723 | $ 294.46 |
| 500+ | $ 1.421 | $ 710.50 |
| 1,000+ | $ 1.3954 | $ 1395.40 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 37A | |
| Gate Threshold Voltage (Vgs(th)) | 3.8V | |
| Pd - Power Dissipation | 417W | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.154nF | |
| Gate Charge(Qg) | 40nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 37A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.8V | |
| Pd - Power Dissipation | 417W | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.154nF | |
| Gate Charge(Qg) | 40nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
AOT42S60L and AOB42S60L are manufactured using the advanced αMOS high-voltage process, designed to deliver high performance and high reliability for switching applications. These devices feature low on-resistance (RDS(on)), low gate charge (Qg), and low output capacitance stored energy (EOSS), with guaranteed avalanche capability, enabling rapid adoption in both new and existing off-line power supply designs.
Features
AI Translation
- Extremely low losses due to ultra-low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Qualified for industrial applications per JEDEC (J-STD20 and JESD22)
Applications
AI Translation
- Power Factor Correction (PFC) stages, hard-switched PWM stages, and resonant-switched PWM stages, such as those used in PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS.
C3290217 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MOT65R099A | MOT | TO-220 | 40 | $ 3.4475 | ||
| IPZ60R099C7 | Infineon | TO-220 | 10 | $4.7275 $10.7442 | ||
| IPP60R099C7 | Infineon | TO-220-3 | 5 | $ 6.1363 | ||
| IPA60R099C6XKSA1 | Infineon | TO-220-FP | 3 | $ 11.1796 | ||
| NCE65TF099 | NCE | TO-220 | 194 | $ 3.2493 | ||
| WMK36N60C4 | Wayon | TO-220 | 434 | $ 1.8601 | ||
| LSD60R105HF | LONTEN | TO-220MF | 2 | $ 2.0428 | ||
| TSM60NB099CZ C0G | Taiwan Semiconductor | TO-220 | 0 | $ 10.0517 | ||
| IPP60R080P7 | Infineon | TO-220-3 | 0 | $ 5.0461 | ||
| AOT095A60L | AOS | TO-220 | 0 | $ 3.4579 |