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onsemi 2N7002
| Manufacturer | |
| MPN | 2N7002 |
| LCSC Part # | C3290044 |
| Packaging | SOT-23-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 115mA SOT-23-3 |
| Datasheet | onsemi 2N7002 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 115mA | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Introduction
These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mAdc and can deliver pulsed currents up to 2 A. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High Density Cell Design for Low RDS(on)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- This Device is Pb−Free and Halogen Free
Applications
- small servo motor control
- power MOSFET gate drivers
- other switching applications
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 25pF | |
| Ciss-Input Capacitance | 50pF | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 115mA | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 7.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Introduction
These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mAdc and can deliver pulsed currents up to 2 A. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High Density Cell Design for Low RDS(on)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- This Device is Pb−Free and Halogen Free
Applications
- small servo motor control
- power MOSFET gate drivers
- other switching applications
C3290044 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |