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Infineon BSP135IXTSA1RoHS

제조업체
Infineon
제조사 품번
BSP135IXTSA1
LCSC 번호
C3288806
포장
SOT-223-4
고객 번호
주요 제원
N-channel, Current:0.12A, Voltage:600V
데이터시트pdf iconInfineon BSP135IXTSA1
재고 있음: 143
143 재고 있음, 당일 발송
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
수량단가총액
1+$ 0.8481$ 0.85
10+$ 0.8351$ 8.35
30+$ 0.8286$ 24.86
100+$ 0.8205$ 82.05
표준 패키지1000/Full Reel
수량이 많을수록 더 좋은 가격?
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제품 사양

전체
타입설명
카테고리Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체Infineon
포장SOT-223-4
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)8.5pF
Current - Continuous Drain(Id)120mA
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)3.4pF
RDS(on)25Ω@10V
Number1 N-channel
Input Capacitance(Ciss)98pF
Gate Charge(Qg)3.7nC@5V
TypeN-Channel
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개요

AI 번역

The IPDQ60R010S7 offers the best cost-performance ratio for low-frequency switching applications. As a high-voltage superjunction MOSFET, CoolMOS™ S7 features an ultra-low on-resistance RDS(on), significantly improving energy efficiency. CoolMOS™ S7 is optimized for "static switching" and high-current applications, making it ideal for solid-state relay and circuit breaker designs, as well as line rectification in SMPS and inverter topologies.

주요 특징

AI 번역
  • N-channel
  • Depletion mode
  • Rated dv/dt
  • Halogen-free per IEC61249-2-21
  • Lead-free terminal plating; RoHS compliant

응용 분야

AI 번역
  • Solid state relays and circuit breakers
  • Diode bridge parallel/replacement in line rectification for high-power/high-performance applications such as computers, telecommunications, UPS, and solar