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ST STB18N60M6
| Manufacturer | |
| MPN | STB18N60M6 |
| LCSC Part # | C3288190 |
| Packaging | D2PAK(TO-263) |
| Customer # | |
| Key Attributes | N-channel, Current:13A, Voltage:600V |
| Datasheet |  ST STB18N60M6 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK(TO-263) | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3.25V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 16.8nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK(TO-263) | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3.25V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 16.8nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The new MDmesh M6 technology incorporates the latest technological advancements into the well-established SJ MOSFET MDmesh product family. It combines excellent on-resistance (RDS(on)) per unit area improvement with highly efficient switching performance, delivering a seamless user experience and maximum efficiency in end applications.
Features
AI Translation
- Reduced switching losses
- Lower on-resistance per unit area (RDS(on)) compared to previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
- LLC converters
- Boost PFC converters
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.7914 | $ 1.79 |
| 200+ | $ 0.6944 | $ 138.88 |
| 500+ | $ 0.6697 | $ 334.85 |
| 1,000+ | $ 0.6574 | $ 657.40 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK(TO-263) | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3.25V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 16.8nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK(TO-263) | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3.25V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 16.8nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The new MDmesh M6 technology incorporates the latest technological advancements into the well-established SJ MOSFET MDmesh product family. It combines excellent on-resistance (RDS(on)) per unit area improvement with highly efficient switching performance, delivering a seamless user experience and maximum efficiency in end applications.
Features
AI Translation
- Reduced switching losses
- Lower on-resistance per unit area (RDS(on)) compared to previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
- LLC converters
- Boost PFC converters
C3288190 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STB18N60M2 | ST | D2PAK | 50 | $ 5.6765 | ||
| ASB65R300E | ANHI | TO-263 | 364 | $ 0.7197 | ||
| NCE70T260D | NCE | TO-263 | 6 | $ 1.225 | ||
| STB20N95K5 | ST | D2PAK | 916 | $ 10.7235 | ||
| STB18N65M5 | ST | D2PAK | 10 | $ 7.1062 | ||
| IPB60R099C7ATMA1 | Infineon | TO-263 | 1 | $ 5.6199 | ||
| BMB80N180C1 | Bestirpower | TO-263-2L | 39 | $ 1.9088 | ||
| TK14G65W,RQ | TOSHIBA | D2PAK | 0 | $ 1.4361 | ||
| AOB280A60L | AOS | TO-263(D2PAK) | 0 | $ 2.7264 | ||
| AOB15S65L | AOS | TO-263(D2PAK) | 0 | $ 3.343 |