Imágenes ilustrativas
Modelos EDAEasyEDA
onsemi IRFW530ATM
| Fabricante | |
| N.º de pieza fab. | IRFW530ATM |
| Nº LCSC | C3288102 |
| Emb. | D2PAK |
| Número de Cliente | |
| Atrib. clave | N-Channel, Current:14A, Voltage:100V |
| Hoja de Datos |  onsemi IRFW530ATM |
| Componentes alternativos | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 3.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 790pF | |
| Gate Charge(Qg) | 36nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 3.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 790pF | |
| Gate Charge(Qg) | 36nC@10V | |
| Type | N-Channel |
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Descripción
Traducción por IA
Power LDMOS transistor rated at 10 W for base station applications, covering frequencies from HF to 1000 MHz.
Características
Traducción por IA
- Avalanche rugged technology
- Rugged gate oxide technology
- Lower input capacitance
- Optimized gate charge
- Extended safe operating area
- 175°C operating temperature
- Lower leakage current: 10 μA (max) @ VDS = 100V
- Lower RDS(ON): 0.092 Ω (typ)
Aplicaciones
Traducción por IA
- RF power amplifier for GSM, EDGE, and CDMA base stations and multi-carrier applications in the 800 to 1000 MHz frequency range
- Broadcast driver
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.3092 | $ 0.31 |
| 200+ | $ 0.1197 | $ 23.94 |
| 500+ | $ 0.1155 | $ 57.75 |
| 1,000+ | $ 0.1134 | $ 113.40 |
Encapsulado Estándar800/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 3.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 790pF | |
| Gate Charge(Qg) | 36nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 3.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 790pF | |
| Gate Charge(Qg) | 36nC@10V | |
| Type | N-Channel |
Reportar un errorMostrar productos similares (0) >
Descripción
Traducción por IA
Power LDMOS transistor rated at 10 W for base station applications, covering frequencies from HF to 1000 MHz.
Características
Traducción por IA
- Avalanche rugged technology
- Rugged gate oxide technology
- Lower input capacitance
- Optimized gate charge
- Extended safe operating area
- 175°C operating temperature
- Lower leakage current: 10 μA (max) @ VDS = 100V
- Lower RDS(ON): 0.092 Ω (typ)
Aplicaciones
Traducción por IA
- RF power amplifier for GSM, EDGE, and CDMA base stations and multi-carrier applications in the 800 to 1000 MHz frequency range
- Broadcast driver
C3288102 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Componentes alternativos
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| WSK26N20 | Winsok Semicon | TO-263-2L | 86 | $0.8702 $0.9668 | ||
| FQB44N10TM | onsemi | D2PAK | 1 | $ 1.4318 | ||
| SUM60N10-17-E3 | VISHAY | TO-263(D2PAK) | 30 | $ 4.4808 | ||
| VBL1254N | VBsemi Elec | TO-263(D2PAK) | 4 | $1.9434 $2.2863 | ||
| IPB083N10N3G-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $1.4330 $1.5084 | ||
| VBL1101N | VBsemi Elec | TO-263 | 46 | $0.9647 $1.1349 | ||
| SUB85N10-10-GE3-VB | VBsemi Elec | TO-263(D2PAK) | 20 | $1.3238 $1.5573 | ||
| STB120NF10T4-VB | VBsemi Elec | TO-263(D2PAK) | 8 | $1.1513 $1.2118 | ||
| IRF3315SPBF | Infineon | D2PAK | 0 | $ 1.094 | ||
| IRF3315STRLPBF | Infineon | D2PAK | 0 | $ 0.6137 |