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NXP A3T23H300W23SR6 product image
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NXP A3T23H300W23SR6

Manufacturer
NXP
MPN
A3T23H300W23SR6
LCSC Part #
C3283099
Packaging
-
Customer #
Key Attributes
RF FETs, MOSFETs RoHS
Datasheetpdf iconNXP A3T23H300W23SR6
RoHS Compliance2 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 188.761$ 188.76
200+$ 73.049$ 14609.80
500+$ 70.4815$ 35240.75
1,000+$ 69.2131$ 69213.10
Standard Packaging150/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs
ManufacturerNXP
Packaging-
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Introduction

AI Translation

This 63 W asymmetric Doherty RF power LDMOS transistor is designed for cellular base station applications requiring extremely wide instantaneous bandwidth capability, covering the 2300 to 2400 MHz frequency range.

Features

AI Translation
  • Advanced high-performance in-package Doherty technology
  • Designed for wide instantaneous bandwidth applications
  • Extended negative gate-source voltage range for improved Class-C operation
  • Capable of withstanding extreme output VSWR and wideband operating conditions
  • Designed for digital pre-distortion error correction systems