Infineon IRF6721STRPBF
| Manufacturer | |
| MPN | IRF6721STRPBF |
| LCSC Part # | C3282832 |
| Packaging | - |
| Customer # | |
| Key Attributes | MOSFET, Current:14A, Voltage:30V |
| Datasheet |  Infineon IRF6721STRPBF |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 10.9mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.43nF | |
| Gate Charge(Qg) | 17nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 10.9mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.43nF | |
| Gate Charge(Qg) | 17nC |
Introduction
The IRF6721SPbF combines the latest HEXFET power MOSFET silicon technology with the advanced DirectFET package to achieve the lowest on-resistance in a package with MICRO-8 footprint and only 0.7 mm height. When following the manufacturing method and process instructions in Application Note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-side cooling to maximize thermal transfer efficiency in power systems, reducing thermal resistance by 80% compared to the previous best.
The IRF6721SPbF strikes a balance between low resistance and low charge while featuring ultra-low package inductance to reduce conduction and switching losses. The reduction in total losses makes this product ideal for high-efficiency DC-DC converters powering the next generation of processors operating at high frequencies. The IRF6721SPbF is optimized for parameters critical to synchronous buck operation, including Rds(on) and gate charge in 12 V bus converters, to minimize losses.
Features
- Low profile (< 0.7 mm)
- Dual-sided heat dissipation
- Ultra-low package inductance
- Optimized for high-frequency switching
- Optimized for control FET applications
- Low conduction and switching losses
- Compatible with existing SMT processes
- 100% Rg tested
Applications
- CPU Core DC-DC Converter
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.4861 | $ 0.49 |
| 200+ | $ 0.1883 | $ 37.66 |
| 500+ | $ 0.1821 | $ 91.05 |
| 1,000+ | $ 0.179 | $ 179.00 |
Standard Packaging2183/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 10.9mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.43nF | |
| Gate Charge(Qg) | 17nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 10.9mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.43nF | |
| Gate Charge(Qg) | 17nC |
Introduction
The IRF6721SPbF combines the latest HEXFET power MOSFET silicon technology with the advanced DirectFET package to achieve the lowest on-resistance in a package with MICRO-8 footprint and only 0.7 mm height. When following the manufacturing method and process instructions in Application Note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-side cooling to maximize thermal transfer efficiency in power systems, reducing thermal resistance by 80% compared to the previous best.
The IRF6721SPbF strikes a balance between low resistance and low charge while featuring ultra-low package inductance to reduce conduction and switching losses. The reduction in total losses makes this product ideal for high-efficiency DC-DC converters powering the next generation of processors operating at high frequencies. The IRF6721SPbF is optimized for parameters critical to synchronous buck operation, including Rds(on) and gate charge in 12 V bus converters, to minimize losses.
Features
- Low profile (< 0.7 mm)
- Dual-sided heat dissipation
- Ultra-low package inductance
- Optimized for high-frequency switching
- Optimized for control FET applications
- Low conduction and switching losses
- Compatible with existing SMT processes
- 100% Rg tested
Applications
- CPU Core DC-DC Converter
C3282832 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |