Images for reference only
EDA ModelsEasyEDA
onsemi FQD4P25TF
| Manufacturer | |
| MPN | FQD4P25TF |
| LCSC Part # | C3281284 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | P-Channel, Current: -3.1A, Voltage: -250V |
| Datasheet |  onsemi FQD4P25TF |
| Alternative Parts | 6 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252(DPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252(DPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switched-mode DC/DC converters.
Features
AI Translation
- 3.1A, -250V, R DS(on) = 2.1Ω at V GS = -10V
- Low gate charge (typ. 10nC)
- Low C rss (typ. 10.3pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- High-efficiency switching DC/DC converters - Switching power supplies - DC-AC converters for UPS - Motor control
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3423 | $ 0.34 |
| 200+ | $ 0.1325 | $ 26.50 |
| 500+ | $ 0.1278 | $ 63.90 |
| 1,000+ | $ 0.1255 | $ 125.50 |
Standard Packaging2000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252(DPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252(DPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switched-mode DC/DC converters.
Features
AI Translation
- 3.1A, -250V, R DS(on) = 2.1Ω at V GS = -10V
- Low gate charge (typ. 10nC)
- Low C rss (typ. 10.3pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- High-efficiency switching DC/DC converters - Switching power supplies - DC-AC converters for UPS - Motor control
C3281284 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFR9310PBF-VB | VBsemi Elec | TO-252 | 98 | $ 1.41 | ||
| DMP45H4D9HK3-13 | DIODES | TO-252 | 28 | $ 0.4801 | ||
| FQD3P50TM-VB | VBsemi Elec | TO-252 | 15 | $ 1.4922 | ||
| HSU4P25 | HUASHUO | TO-252 | 2,500 | $ 0.3021 | ||
| FQD4P25TM_WS-VB | VBsemi Elec | TO-252 | 11 | $0.8670 $0.9126 | ||
| VBE2251K | VBsemi Elec | TO-252 | 0 | $1.2984 $1.3667 |