VISHAY SIHG15N80AE-GE3
| Manufacturer | |
| MPN | SIHG15N80AE-GE3 |
| LCSC Part # | C3281120 |
| Packaging | TO-247AC |
| Customer # | |
| Key Attributes | N-Channel MOSFET, Current: 8A, Voltage: 800V |
| Datasheet | |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 49pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 156W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.093nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 49pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 156W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.093nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | N-Channel |
Introduction
This device is an N-channel MDmesh V power MOSFET based on innovative proprietary vertical process technology, combined with the well-known PowerMESH lateral layout structure. The resulting product features an extremely low on-resistance, unmatched among silicon-based power MOSFETs, making it particularly suitable for applications requiring superior power density and outstanding efficiency.
Features
- Low figure of merit (FOM) Ron × Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
Applications
- Server and Telecom Power Supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- Lighting
- High Intensity Discharge (HID) Lamps
- Fluorescent Lamp Ballast Lighting
- Industrial Applications
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Solar (Photovoltaic Inverters)
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.0441 | $ 2.04 |
| 200+ | $ 0.7911 | $ 158.22 |
| 500+ | $ 0.7635 | $ 381.75 |
| 1,000+ | $ 0.7506 | $ 750.60 |
Standard Packaging25/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 49pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 156W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.093nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 49pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 156W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.093nF | |
| Gate Charge(Qg) | 53nC@10V | |
| Type | N-Channel |
Introduction
This device is an N-channel MDmesh V power MOSFET based on innovative proprietary vertical process technology, combined with the well-known PowerMESH lateral layout structure. The resulting product features an extremely low on-resistance, unmatched among silicon-based power MOSFETs, making it particularly suitable for applications requiring superior power density and outstanding efficiency.
Features
- Low figure of merit (FOM) Ron × Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
Applications
- Server and Telecom Power Supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- Lighting
- High Intensity Discharge (HID) Lamps
- Fluorescent Lamp Ballast Lighting
- Industrial Applications
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Solar (Photovoltaic Inverters)
C3281120 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SCT2160KEGC11 | ROHM | TO-247N | 383 | $ 5.8461 | ||
| NVHL080N120SC1A | onsemi | TO-247-3 | 11 | $ 13.4501 | ||
| SCT2280KEGC11 | ROHM | TO-247N | 3 | $ 10.6833 | ||
| SiHG24N80AE-VB | VBsemi Elec | TO-247AC | 30 | $4.9142 $5.7814 | ||
| SIHG15N80AEF-GE3 | VISHAY | TO-247AC | 0 | $ 1.9874 | ||
| SIHG17N80AEF-GE3 | VISHAY | TO-247AC | 0 | $ 2.1031 | ||
| SIHG17N80AE-GE3 | VISHAY | TO-247AC | 0 | $ 2.1478 | ||
| SCT2160KEHRC11 | ROHM | TO-247N | 0 | $ 7.3971 | ||
| VBP19R15S | VBsemi Elec | TO-247 | 0 | $ 5.3338 | ||
| STW20N95DK5 | ST | TO-247-3 | 0 | $ 8.8835 |

