onsemi FCPF380N60E-F154
| Manufacturer | |
| MPN | FCPF380N60E-F154 |
| LCSC Part # | C3280885 |
| Packaging | TO-220F-3 |
| Customer # | |
| Key Attributes | N-Channel, Current: 10.2A, Voltage: 600V |
| Datasheet | |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.26nF | |
| Current - Continuous Drain(Id) | 10.2A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.26nF | |
| Current - Continuous Drain(Id) | 10.2A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
Introduction
SUPERFET II MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. The technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates and higher avalanche energy. As a result, the SUPERFET II Easy Drive MOSFET series helps address EMI issues, making designs easier to implement.
Features
- 650 V @ TJ = 150°C
- Typical RDS(on) = 320 mΩ
- Ultra-low gate charge (typical Qg = 34 nC)
- Low effective output capacitance (typical Coss.eff = 97 pF)
- 100% avalanche tested
- Lead-free, RoHS compliant
Applications
- Computer/Monitor Power Supplies - Telecom/Server Power Supplies - Industrial Power Supplies - Lighting/Chargers/Adapters
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.4978 | $ 1.50 |
| 200+ | $ 0.5804 | $ 116.08 |
| 500+ | $ 0.5593 | $ 279.65 |
| 1,000+ | $ 0.5496 | $ 549.60 |
Standard Packaging1000/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.26nF | |
| Current - Continuous Drain(Id) | 10.2A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F-3 | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.26nF | |
| Current - Continuous Drain(Id) | 10.2A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | N-Channel |
Introduction
SUPERFET II MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. The technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates and higher avalanche energy. As a result, the SUPERFET II Easy Drive MOSFET series helps address EMI issues, making designs easier to implement.
Features
- 650 V @ TJ = 150°C
- Typical RDS(on) = 320 mΩ
- Ultra-low gate charge (typical Qg = 34 nC)
- Low effective output capacitance (typical Coss.eff = 97 pF)
- 100% avalanche tested
- Lead-free, RoHS compliant
Applications
- Computer/Monitor Power Supplies - Telecom/Server Power Supplies - Industrial Power Supplies - Lighting/Chargers/Adapters
C3280885 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FCPF380N60E | onsemi | TO-220F | 2 | $ 3.1351 | ||
| TK25A60X,S5X(M | TOSHIBA | SC-67 | 2,440 | $ 2.4739 | ||
| FCPF380N65FL1-F154 | onsemi | TO-220F | 1 | $ 2.5068 | ||
| 12N65F | luJing | TO-220F | 365 | $0.4341 $0.4933 | ||
| FCPF380N60-F154 | onsemi | TO-220F-3 | 0 | $ 1.4247 | ||
| X16N60DHC3 | XYD | TO-220F-3L | 0 | $ 0.6847 | ||
| FCPF260N60E-F154 | onsemi | TO-220F-3 | 0 | $ 1.79 | ||
| FCPF190N60E-F154 | onsemi | TO-220F-3 | 0 | $ 2.1274 | ||
| FCPF190N60-F154 | onsemi | TO-220F-3 | 0 | $ 1.9952 | ||
| X12N70DHC3 | XYD | TO-220F-3L | 0 | $ 0.6399 |

