onsemi FQP10N20CTSTU
| Manufacturer | |
| MPN | FQP10N20CTSTU |
| LCSC Part # | C3280586 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | N-Channel, Current: 9.5A, Voltage: 200V |
| Datasheet |  onsemi FQP10N20CTSTU |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 125pF | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 510pF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 125pF | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 510pF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
Introduction
These N-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for use in high-efficiency switching DC/DC converters, switching power supplies, DC-AC inverters for UPS, and motor control applications.
Features
- 9.5A, 200V, R DS(ON) = 0.36Ω at V GS = 10V
- Low gate charge (typical 20nC)
- Low C rss (typical 40.5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
- High-efficiency switching DC/DC converters
- Switching power supplies
- DC-AC converters for UPS
- Motor control
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3423 | $ 0.34 |
| 200+ | $ 0.1325 | $ 26.50 |
| 500+ | $ 0.1278 | $ 63.90 |
| 1,000+ | $ 0.1255 | $ 125.50 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 125pF | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 510pF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 125pF | |
| Current - Continuous Drain(Id) | 9.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 510pF | |
| Gate Charge(Qg) | 26nC@10V | |
| Type | N-Channel |
Introduction
These N-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for use in high-efficiency switching DC/DC converters, switching power supplies, DC-AC inverters for UPS, and motor control applications.
Features
- 9.5A, 200V, R DS(ON) = 0.36Ω at V GS = 10V
- Low gate charge (typical 20nC)
- Low C rss (typical 40.5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
- High-efficiency switching DC/DC converters
- Switching power supplies
- DC-AC converters for UPS
- Motor control
C3280586 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FQP10N20C | onsemi | TO-220 | 1 | $ 1.0796 | ||
| TSP630M | Truesemi | TO-220 | 95 | $ 0.2773 | ||
| WGP10N20 | Wild Goose | TO-220 | 915 | $ 0.2842 | ||
| STP10NM60N | ST | TO-220 | 5 | $ 4.7277 | ||
| IRF630 | ST | TO-220 | 1 | $ 1.0577 | ||
| JCS630CA | Jilin Sino-Microelectronics | TO-220C | 90 | $ 0.4665 | ||
| SVF20N60F | Hangzhou Silan Microelectronics | TO-220 | 1,053 | $ 1.0171 | ||
| IPP60R180C7XKSA1 | Infineon | TO-220-3 | 18 | $ 3.7074 | ||
| BUZ32 | TI | TO-220AB | 0 | $ 0.6188 | ||
| IRF630A | onsemi | TO-220 | 0 | $ 0.4416 |