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onsemi FDC5614PRoHS

Manufacturer
MPN
FDC5614P
LCSC Part #
C3280207
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET P-CH 60V 3A SuperSOT-6
Datasheetpdf icononsemi FDC5614P
Not available now
Minimum: 5Multiple: 5Sales Unit: Piece

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSuperSOT-6
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)3A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)135mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)759pF
Gate Charge(Qg)24nC@10V
TypeP-Channel

Introduction

AI Translation

This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications.

Features

AI Translation
  • -3 A, -60 V
  • RDS(on)=0.105 Ω @ VGS=-10 V
  • RDS(on)=0.135 Ω @ VGS=-4.5 V
  • Fast Switching Speed
  • High Performance Trench Technology for Extremely Low RDS(on)
  • This is a Pb−Free and Halide Free Device

Applications

AI Translation
  • DC−DC Converters
  • Load Switch
  • Power Management