Images for reference only
EDA ModelsEasyEDA
onsemi FDS7766S
| Manufacturer | |
| MPN | FDS7766S |
| LCSC Part # | C3279864 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | N-Channel, Current:17A, Voltage:30V |
| Datasheet |  onsemi FDS7766S |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF | |
| RDS(on) | 6.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.785nF | |
| Gate Charge(Qg) | 58nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF | |
| RDS(on) | 6.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.785nF | |
| Gate Charge(Qg) | 58nC@5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
FDS7766S is designed to replace individual SO-8 MOSFETs and Schottky diodes in synchronous DC-DC power supplies. This 30V MOSFET is optimized to maximize power conversion efficiency, featuring low RDS(ON) and low gate charge. The FDS7766S incorporates monolithic SyncFET technology with an integrated Schottky diode.
Features
AI Translation
- 17 A, 30 V, RDS(ON) = 5.5 mΩ (at VGS = 10 V)
- RDS(ON) = 6.5 mΩ (at VGS = 4.5 V)
- High-performance trench technology for ultra-low RDS(ON)
- High power and current handling capability
- Fast switching
Applications
AI Translation
- Synchronous Rectifier - DC/DC Converter
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.4302 | $ 2.43 |
| 200+ | $ 0.9413 | $ 188.26 |
| 500+ | $ 0.9073 | $ 453.65 |
| 1,000+ | $ 0.8919 | $ 891.90 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF | |
| RDS(on) | 6.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.785nF | |
| Gate Charge(Qg) | 58nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF | |
| RDS(on) | 6.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.785nF | |
| Gate Charge(Qg) | 58nC@5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
FDS7766S is designed to replace individual SO-8 MOSFETs and Schottky diodes in synchronous DC-DC power supplies. This 30V MOSFET is optimized to maximize power conversion efficiency, featuring low RDS(ON) and low gate charge. The FDS7766S incorporates monolithic SyncFET technology with an integrated Schottky diode.
Features
AI Translation
- 17 A, 30 V, RDS(ON) = 5.5 mΩ (at VGS = 10 V)
- RDS(ON) = 6.5 mΩ (at VGS = 4.5 V)
- High-performance trench technology for ultra-low RDS(ON)
- High power and current handling capability
- Fast switching
Applications
AI Translation
- Synchronous Rectifier - DC/DC Converter
C3279864 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| ME4626 | MATSUKI | SOP-8 | 19 | $ 0.5653 | ||
| PTS9468 | HT(Shenzhen Jinyu Semicon) | SOP-8 | 2,360 | $0.1504 $0.1583 | ||
| VBZA4430 | VBsemi Elec | SO-8 | 1 | $0.5295 $0.5573 | ||
| AP92U03GM-HF-VB | VBsemi Elec | SO-8 | 47 | $0.4063 $0.4779 | ||
| AO4430-VB | VBsemi Elec | SO-8 | 27 | $0.4234 $0.4981 | ||
| APM4330KC-TRL-VB | VBsemi Elec | SO-8 | 21 | $0.4063 $0.4779 | ||
| TPC8A02-H-VB | VBsemi Elec | SO-8 | 14 | $0.4063 $0.4779 | ||
| FDS6670A | onsemi | SO-8 | 6 | $ 0.7149 | ||
| IRF7842PBF | Infineon | SO-8 | 0 | $ 0.5565 | ||
| FDS7766 | onsemi | SOIC-8 | 0 | $ 1.0385 |