VISHAY SI4386DY-T1-GE3
| Manufacturer | |
| MPN | SI4386DY-T1-GE3 |
| LCSC Part # | C3279837 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | N-Channel, Current:16A, Voltage:30V |
| Datasheet |  VISHAY SI4386DY-T1-GE3 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 9.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 9.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | N-Channel |
Introduction
The IRF8252PbF incorporates the latest HEXFET power MOSFET silicon technology into the industry-standard SO-8 package. The IRF8252PbF is optimized for critical parameters in synchronous buck operation, including Rds(on) and gate charge, to reduce conduction losses and switching losses. The reduction in total losses makes this device an ideal choice for high-efficiency DC-DC converters powering next-generation processors in notebook and network communication applications.
Features
- Halogen-free per IEC 61249-2-21
- 2nd Generation TrenchFET Power MOSFET
- PWM Optimized
- 100% Rg Tested
Applications
- DC/DC conversion for personal computers (PCs)
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7345 | $ 0.73 |
| 200+ | $ 0.2855 | $ 57.10 |
| 500+ | $ 0.2747 | $ 137.35 |
| 1,000+ | $ 0.2701 | $ 270.10 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 9.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 9.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | N-Channel |
Introduction
The IRF8252PbF incorporates the latest HEXFET power MOSFET silicon technology into the industry-standard SO-8 package. The IRF8252PbF is optimized for critical parameters in synchronous buck operation, including Rds(on) and gate charge, to reduce conduction losses and switching losses. The reduction in total losses makes this device an ideal choice for high-efficiency DC-DC converters powering next-generation processors in notebook and network communication applications.
Features
- Halogen-free per IEC 61249-2-21
- 2nd Generation TrenchFET Power MOSFET
- PWM Optimized
- 100% Rg Tested
Applications
- DC/DC conversion for personal computers (PCs)
C3279837 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| TPSI4178DY-T1-GE3 | TECH PUBLIC | SOP-8 | 1,000 | $ 0.1657 | ||
| 45N18 | FM | SOP-8 | 250 | $ 0.1651 | ||
| YFW4410AS | YFW | SOP-8 | 2,870 | $0.1593 $0.177 | ||
| CMS4576B | Cmos | SOP-8 | 55 | $0.1301 $0.1369 | ||
| SI4190BDY-T1-GE3 | VISHAY | SOIC-8 | 30 | $ 2.4841 | ||
| SI4124DY-T1-E3-VB | VBsemi Elec | SO-8 | 9 | $0.4657 $0.5478 | ||
| AO4410-GK | GOODWORK | SOP-8 | 405 | $0.1089 $0.1146 | ||
| RJK0354DSP-00#J0 | RENESAS | SOP-8 | 0 | $ 0.699 | ||
| SI4386DY-T1-E3 | VISHAY | SO-8 | 0 | $ 3.7692 | ||
| TPH8R903NL,LQ | TOSHIBA | SOP-8 | 0 | $ 0.7576 |