Immagini a scopo illustrativo
Modelli EDAEasyEDA
onsemi SI9424DY
| Produttore | |
| Cod. Prod. | SI9424DY |
| Cod. LCSC | C3279832 |
| Imballo | SOIC-8 |
| Numero Cliente | |
| Attr. chiave | P-Channel MOSFET, Current:8A, Breakdown Voltage:20V |
| Scheda Tecnica |  onsemi SI9424DY |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 32mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.26nF | |
| Gate Charge(Qg) | 33nC@5V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 32mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.26nF | |
| Gate Charge(Qg) | 33nC@5V | |
| Type | P-Channel |
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Descrizione
Traduzione AI
This P-channel MOSFET, specified at 2.5V, is manufactured using the advanced PowerTrench process, which is specially optimized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low line power dissipation and fast switching.
Caratteristiche
Traduzione AI
- -8.0 A, -20 V. RDS(on) = 0.024 Ω at VGS = -4.5 V
- RDS(on) = 0.032 Ω at VGS = -2.5 V
- Low gate charge (typical 23nC).
- Fast switching speed.
- High-performance trench technology for ultra-low RDS(ON).
- High power and current handling capability.
Applicazioni
Traduzione AI
- DC/DC Converters
- Load Switches
- Battery Protection
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.4861 | $ 0.49 |
| 200+ | $ 0.1883 | $ 37.66 |
| 500+ | $ 0.1821 | $ 91.05 |
| 1,000+ | $ 0.179 | $ 179.00 |
Package Standard2500/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 32mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.26nF | |
| Gate Charge(Qg) | 33nC@5V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| RDS(on) | 32mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.26nF | |
| Gate Charge(Qg) | 33nC@5V | |
| Type | P-Channel |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
This P-channel MOSFET, specified at 2.5V, is manufactured using the advanced PowerTrench process, which is specially optimized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low line power dissipation and fast switching.
Caratteristiche
Traduzione AI
- -8.0 A, -20 V. RDS(on) = 0.024 Ω at VGS = -4.5 V
- RDS(on) = 0.032 Ω at VGS = -2.5 V
- Low gate charge (typical 23nC).
- Fast switching speed.
- High-performance trench technology for ultra-low RDS(ON).
- High power and current handling capability.
Applicazioni
Traduzione AI
- DC/DC Converters
- Load Switches
- Battery Protection
C3279832 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SC011P2G | DOINGTER | SOP-8 | 825 | $ 0.1109 | ||
| IRF7241PBF-HXY | HXY MOSFET | SOP-8 | 3,065 | $0.2538 $0.2884 | ||
| AO4485 | GOODWORK | SOP-8 | 2,160 | $0.1476 $0.1553 | ||
| AO4485 | HXY MOSFET | SOP-8 | 1,385 | $0.1911 $0.2054 | ||
| HSI4401DY | HXY MOSFET | SOP-8 | 232 | $0.4411 $0.4643 | ||
| FDS4685-HXY | HXY MOSFET | SOP-8 | 215 | $0.2488 $0.2618 | ||
| HIRF7240TRPBF | HXY MOSFET | SOP-8 | 204 | $0.6090 $0.641 | ||
| DMP4050SSS-HXY | HXY MOSFET | SOP-8 | 90 | $0.3047 $0.3207 | ||
| SI4447DY-T1-E3-HXY | HXY MOSFET | SOP-8 | 10 | $0.2072 $0.2302 | ||
| AO4443-HXY | HXY MOSFET | SOP-8 | 0 | $0.2123 $0.2234 |