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Infineon IRFHM8337TRPBF-IR
| Manufacturer | |
| MPN | IRFHM8337TRPBF-IR |
| LCSC Part # | C3279633 |
| Packaging | PQFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | N-Channel, Current: 180A, Voltage: 30V |
| Datasheet |  Infineon IRFHM8337TRPBF-IR |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | PQFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 171pF | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 12.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 755pF | |
| Gate Charge(Qg) | 8.1nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | PQFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 171pF | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 12.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 755pF | |
| Gate Charge(Qg) | 8.1nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The new MDmesh M6 technology incorporates the latest improvements to the well-known and mature MDmesh superjunction (SJ) MOSFET series. It combines excellent RDS(on) per unit area improvement with efficient switching performance, delivering a seamless user experience and maximum efficiency in end applications.
Features
AI Translation
- Reduced switching losses
- Lower on-resistance R<sub>DS(on)</sub> per unit area vs. previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener diode protection
Applications
AI Translation
- System/Load Switch - Charge/Discharge Switch for Battery Protection
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1767 | $ 0.18 |
| 200+ | $ 0.0684 | $ 13.68 |
| 500+ | $ 0.066 | $ 33.00 |
| 1,000+ | $ 0.0648 | $ 64.80 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | PQFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 171pF | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 12.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 755pF | |
| Gate Charge(Qg) | 8.1nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | PQFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 171pF | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 12.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 755pF | |
| Gate Charge(Qg) | 8.1nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The new MDmesh M6 technology incorporates the latest improvements to the well-known and mature MDmesh superjunction (SJ) MOSFET series. It combines excellent RDS(on) per unit area improvement with efficient switching performance, delivering a seamless user experience and maximum efficiency in end applications.
Features
AI Translation
- Reduced switching losses
- Lower on-resistance R<sub>DS(on)</sub> per unit area vs. previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener diode protection
Applications
AI Translation
- System/Load Switch - Charge/Discharge Switch for Battery Protection
C3279633 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SIS476DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 8 | $ 3.4426 | ||
| SIS890DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 34 | $ 2.3058 | ||
| DOY180N03T | DOINGTER | TDFN3333-8PL | 716 | $ 0.4594 | ||
| YD2R2TG-DSC | DOINGTER | TDFN-8DSC(3.3x3.3) | 82 | $ 0.5654 | ||
| IRL7472L1TRPBF | Infineon | WHSON-8(3.3x3.3) | 22 | $ 4.6237 | ||
| YC1R3TG-PL | DOINGTER | TDFN-8(3.3x3.3) | 980 | $ 0.3686 | ||
| SISS06DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 0 | $ 0.6018 | ||
| IQE008N03LM5ATMA1 | Infineon | TSON-8-EP(3.3x3.3) | 0 | $ 4.2757 | ||
| IQE013N04LM6SCATMA1 | Infineon | WHSON-8(3.3x3.3) | 0 | $ 2.4012 | ||
| SISS52DN-T1-GE3 | VISHAY | PowerPAK1212-8SH | 0 | $ 3.2672 |